Overview of Whole titanium sputtering target
Titaniyamu (Za) ndi chinthu chamankhwala chokhala ndi nambala ya atomiki 22 ndipo akuimiridwa ngati Ti pa tebulo la periodic. Ndi m'gulu la transition metals ndipo amadziwika chifukwa chochepa kwambiri, kuchuluka kwa mphamvu ndi kulemera, ndi kukana dzimbiri kwapadera. Zapezeka mu 1791 ndi William Gregor, Titaniyamu yakhala chinthu chofunikira m'mafakitale ambiri chifukwa cha kuphatikiza kwake kwapadera.
Feature of Whole titanium sputtering target
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Low Density ndi High Mphamvu: Titaniyamu ndi pafupi 45% opepuka kuposa chitsulo koma ali ndi mphamvu zofanana, kupanga kukhala yabwino kwa ntchito kumene kuchepetsa kulemera n'kofunika popanda kusokoneza mphamvu.
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Kukaniza kwa Corrosion: Zimapanga oxide passive layer yomwe imateteza chitsulo chapansi pa zinthu zowononga, kuphatikizapo madzi a m'nyanja ndi klorini, kuzipangitsa kuti zisawonongeke ndi dzimbiri.
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Biocompatibility: Titaniyamu imaloledwa bwino ndi thupi la munthu ndipo sichimayambitsa zovuta, ndichifukwa chake amagwiritsidwa ntchito kwambiri m'ma implants azachipatala ndi zida za opaleshoni.
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Kukaniza Kutentha: Ndi malo osungunuka a 1,668 ° C (3,034°F), titaniyamu imatha kupirira kutentha kwambiri, kuzipangitsa kukhala zoyenera kwazamlengalenga ndi ntchito zamagalimoto.
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Non-Maginito ndi Non-Poizoni: Izi zimapangitsa kuti titaniyamu ikhale yoyenera kugwiritsidwa ntchito pamakina a MRI ndi zida zina zamagetsi zamagetsi.
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Kukaniza Kutopa: Titaniyamu ikuwonetsa kukana kwachitsulo kutopa, Zofunikira pakukweza kwapang'onopang'ono monga zida zandege.
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(Whole titanium sputtering target)
Parameters of Whole titanium sputtering target
The parameters of a whole titanium sputtering target refer to the factors that influence the performance and behavior of the target during sputtering processes. Some of the key parameters include:
1. Cross-section area: The cross-sectional area of the target determines its surface area, which affects the number of ions that can be impinging on it per unit time.
2. Critical current density: The critical current density is the minimum amount of current needed for ionization and deposition to occur at a given temperature. It is an important parameter for controlling the rate of sputtering processes.
3. Sputtering velocity: The sputtering velocity determines how quickly ions with different energies and charges can collide with the target. A higher sputtering velocity results in faster ionization and deposition rates.
4. Temperature: The temperature of the target determines the rate of sputtering and the properties of the deposited layer. Higher temperatures result in more rapid sputtering and deposition, but may also lead to greater thermal stress and damage to the material being sputtered.
5. Characteristic sputtering parameters: These are specific characteristics of the sputtering process that depend on the above parameters, such as the deposition rate, grain size, and purity of the deposited layer.
6. Beam profile: The beam profile of the sputtering beam is also important, as it affects the diffraction pattern of the deposited layer and can affect the thickness of the deposit.
Zonse, understanding these parameters is crucial for optimizing the performance of a whole titanium sputtering target and achieving desired properties for industrial applications.

(Whole titanium sputtering target)
Mbiri Yakampani
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